Quantum Transport in Band-Engineered Novel Semiconductors

PhD type: 
Doctoral School of Physical Sciences
Year: 
2025/2026/1
Unit: 
Department of Physics, Institute of Physics
Address of unit: 
1111 Budapest, Műegyetem rakpart 8.
Description: 

Semiconductors are at the heart of condensed matter research, offering both remarkable technological applications and fascinating fundamental properties. Beyond their traditional roles, these materials can exhibit degenerate metallic behavior, superconductivity, intrinsic magnetism, multiferroicity, and the ability to host quantum defects.

This PhD project focuses on exploring novel doped semiconductors, including transition metal dichalcogenides, hexagonal boron nitride, and diamond and beyond. The research will involve tailoring these materials through electron and hole doping, as well as introducing magnetic dopants to investigate magnetically correlated and strongly correlated electronic phases—such as density wave and superconducting states.

A key aspect of the project will be systematic irradiation studies to assess the susceptibility of host materials to structural defects, as well as the fabrication of semiconductor devices for transport measurements. The experimental techniques will include magnetic resonance, magnetotransport measurements, optical and Raman spectroscopies, and their combined applications.

The research will be conducted within the framework of a double PhD program, in collaboration with the group of Prof. László Forró at the University of Notre Dame.

Requirements: 

good affinity to experimental research, solid background in theoretical and experimental condensed matter physics, good informatics skills

State: 
Végleges
Témavezető
Name: 
Simon Ferenc
Email: 
simon.ferenc@ttk.bme.hu
Institute: 
Department of Physics, Institute of Physics
Assignment: 
professor
Scientific degree: 
PhD, DSc
Stipendicum Hungaricum: 
No