Beside the well known III-nitrides the wide bandgap semiconducting materials include new extensively researched materials like for example gallium oxide (Ga₂O₃) with its many polytypes. There is a task to deposit gallium oxide by magnetron sputtering and make a detailed characterization.

Another task could be the preparation of heterostructure of molybdenum disulfide (MoS2) on gallium oxide and aluminium nitrid (AlN) as well, first on commercial substrates then on our own, laboratory grown layers.

The characterization will be done by TEM/STEM, XPS for which we do have modern equipments.

The work is supported by a new NKKP project "Wide bandgap semiconductors and heterostructures".